High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs

High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 5 vom: 25. Feb.
Auteur principal: Zhao, Yuda (Auteur)
Autres auteurs: Qiao, Jingsi, Yu, Zhihao, Yu, Peng, Xu, Kang, Lau, Shu Ping, Zhou, Wu, Liu, Zheng, Wang, Xinran, Ji, Wei, Chai, Yang
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article 2D layered materials PtSe2 electronic structure mobility transition metal dichalcogenides
Description
Résumé:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 . The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material
Description:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201604230