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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201604230
|2 doi
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|a pubmed24n0888.xml
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|a eng
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1 |
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|a Zhao, Yuda
|e verfasserin
|4 aut
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| 245 |
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|a High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs
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|c 2017
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|a Text
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|a ƒaComputermedien
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 . The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material
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|a Journal Article
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|a 2D layered materials
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|a PtSe2
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|a electronic structure
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|a mobility
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|a transition metal dichalcogenides
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|a Qiao, Jingsi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Zhihao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Peng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Kang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lau, Shu Ping
|e verfasserin
|4 aut
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|a Zhou, Wu
|e verfasserin
|4 aut
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1 |
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|a Liu, Zheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xinran
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ji, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chai, Yang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
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|g 29(2017), 5 vom: 25. Feb.
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