The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field-Effect Transistors

The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field-Effect Transistors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 4 vom: 23. Jan.
Auteur principal: Li, Dehui (Auteur)
Autres auteurs: Cheng, Hung-Chieh, Wang, Yiliu, Zhao, Zipeng, Wang, Gongming, Wu, Hao, He, Qiyuan, Huang, Yu, Duan, Xiangfeng
Format: Article en ligne
Langue:English
Publié: 2017
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article graphene contact perovskite microplate transistors thermal annealing
Description
Résumé:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials
Description:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201601959