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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601959
|2 doi
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|a pubmed24n0887.xml
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|a (NLM)27859707
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Dehui
|e verfasserin
|4 aut
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| 245 |
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4 |
|a The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field-Effect Transistors
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials
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|a Journal Article
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|a graphene contact
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|a perovskite microplate transistors
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|a thermal annealing
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1 |
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|a Cheng, Hung-Chieh
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yiliu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Zipeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Gongming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Qiyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Duan, Xiangfeng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 4 vom: 23. Jan.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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1 |
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|g volume:29
|g year:2017
|g number:4
|g day:23
|g month:01
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|u http://dx.doi.org/10.1002/adma.201601959
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