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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201602413
|2 doi
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|a eng
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|a Sessi, Paolo
|e verfasserin
|4 aut
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|a Single Electron Gating of Topological Insulators
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|c 2016
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|a Text
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|a ƒaComputermedien
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|a Date Completed 17.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit
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|a Journal Article
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|a hybrid heterostructures
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|a ionization
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|a molecules
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|a scanning tunneling microscopy
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|a topological insulators
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|a Bathon, Thomas
|e verfasserin
|4 aut
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|a Kokh, Konstantin Aleksandrovich
|e verfasserin
|4 aut
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|a Tereshchenko, Oleg Evgenievich
|e verfasserin
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|a Bode, Matthias
|e verfasserin
|4 aut
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|t Advanced materials (Deerfield Beach, Fla.)
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