Single Electron Gating of Topological Insulators

Single Electron Gating of Topological Insulators

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 45 vom: 27. Dez., Seite 10073-10078
1. Verfasser: Sessi, Paolo (VerfasserIn)
Weitere Verfasser: Bathon, Thomas, Kokh, Konstantin Aleksandrovich, Tereshchenko, Oleg Evgenievich, Bode, Matthias
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article hybrid heterostructures ionization molecules scanning tunneling microscopy topological insulators
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit
Beschreibung:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201602413