Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 44 vom: 20. Nov., Seite 9735-9743
1. Verfasser: Gao, Jian (VerfasserIn)
Weitere Verfasser: Kim, Young Duck, Liang, Liangbo, Idrobo, Juan Carlos, Chow, Phil, Tan, Jiawei, Li, Baichang, Li, Lu, Sumpter, Bobby G, Lu, Toh-Ming, Meunier, Vincent, Hone, James, Koratkar, Nikhil
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article band structure chemical vapor deposition electronic properties monolayer transition-metal dichalcogenides transition-metal doping
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence
Beschreibung:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201601104