Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 43 vom: 13. Nov., Seite 9519-9525
1. Verfasser:	Lee, Inyeal (VerfasserIn)
Weitere Verfasser:	Rathi, Servin, Lim, Dongsuk, Li, Lijun, Park, Jinwoo, Lee, Yoontae, Yi, Kyung Soo, Dhakal, Krishna P, Kim, Jeongyong, Lee, Changgu, Lee, Gwan-Hyoung, Kim, Young Duck, Hone, James, Yun, Sun Jin, Youn, Doo-Hyeb, Kim, Gil-Ho
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2016
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article MoS2 WSe2 dual-channel heterostructures photoresponse


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100	1		\|a Lee, Inyeal \|e verfasserin \|4 aut
245	1	0	\|a Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors
264		1	\|c 2016
336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
338			\|a ƒa Online-Ressource \|b cr \|2 rdacarrier
500			\|a Date Completed 17.07.2018
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2 , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2 /MoS2 dual-channel FET
650		4	\|a Journal Article
650		4	\|a MoS2
650		4	\|a WSe2
650		4	\|a dual-channel
650		4	\|a heterostructures
650		4	\|a photoresponse
700	1		\|a Rathi, Servin \|e verfasserin \|4 aut
700	1		\|a Lim, Dongsuk \|e verfasserin \|4 aut
700	1		\|a Li, Lijun \|e verfasserin \|4 aut
700	1		\|a Park, Jinwoo \|e verfasserin \|4 aut
700	1		\|a Lee, Yoontae \|e verfasserin \|4 aut
700	1		\|a Yi, Kyung Soo \|e verfasserin \|4 aut
700	1		\|a Dhakal, Krishna P \|e verfasserin \|4 aut
700	1		\|a Kim, Jeongyong \|e verfasserin \|4 aut
700	1		\|a Lee, Changgu \|e verfasserin \|4 aut
700	1		\|a Lee, Gwan-Hyoung \|e verfasserin \|4 aut
700	1		\|a Kim, Young Duck \|e verfasserin \|4 aut
700	1		\|a Hone, James \|e verfasserin \|4 aut
700	1		\|a Yun, Sun Jin \|e verfasserin \|4 aut
700	1		\|a Youn, Doo-Hyeb \|e verfasserin \|4 aut
700	1		\|a Kim, Gil-Ho \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 28(2016), 43 vom: 13. Nov., Seite 9519-9525 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnas
773	1	8	\|g volume:28 \|g year:2016 \|g number:43 \|g day:13 \|g month:11 \|g pages:9519-9525
856	4	0	\|u http://dx.doi.org/10.1002/adma.201601949 \|3 Volltext
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