Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities

Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 46 vom: 08. Dez., Seite 10275-10281
1. Verfasser: Matsushima, Toshinori (VerfasserIn)
Weitere Verfasser: Hwang, Sunbin, Sandanayaka, Atula S D, Qin, Chuanjiang, Terakawa, Shinobu, Fujihara, Takashi, Yahiro, Masayuki, Adachi, Chihaya
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors hole mobility hysteresis organic-inorganic perovskites surface treatment
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500 |a Date Revised 30.09.2020 
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520 |a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a A very high hole mobility of 15 cm2 V-1 s-1 along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers 
650 4 |a Journal Article 
650 4 |a field-effect transistors 
650 4 |a hole mobility 
650 4 |a hysteresis 
650 4 |a organic-inorganic perovskites 
650 4 |a surface treatment 
700 1 |a Hwang, Sunbin  |e verfasserin  |4 aut 
700 1 |a Sandanayaka, Atula S D  |e verfasserin  |4 aut 
700 1 |a Qin, Chuanjiang  |e verfasserin  |4 aut 
700 1 |a Terakawa, Shinobu  |e verfasserin  |4 aut 
700 1 |a Fujihara, Takashi  |e verfasserin  |4 aut 
700 1 |a Yahiro, Masayuki  |e verfasserin  |4 aut 
700 1 |a Adachi, Chihaya  |e verfasserin  |4 aut 
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