Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities

Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 46 vom: 08. Dez., Seite 10275-10281
1. Verfasser: Matsushima, Toshinori (VerfasserIn)
Weitere Verfasser: Hwang, Sunbin, Sandanayaka, Atula S D, Qin, Chuanjiang, Terakawa, Shinobu, Fujihara, Takashi, Yahiro, Masayuki, Adachi, Chihaya
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors hole mobility hysteresis organic-inorganic perovskites surface treatment
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A very high hole mobility of 15 cm2 V-1 s-1 along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201603126