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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201602626
|2 doi
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|a pubmed24n0880.xml
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|a (NLM)27601145
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|e rakwb
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|a eng
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1 |
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|a Shin, Bong Gyu
|e verfasserin
|4 aut
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|a Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2 on a SiO2 /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2
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|a Journal Article
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|a MoS2
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|a bandgap
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|a direct-to-indirect bandgap transition
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|a layered materials
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|a strain
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1 |
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|a Han, Gang Hee
|e verfasserin
|4 aut
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1 |
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|a Yun, Seok Joon
|e verfasserin
|4 aut
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|a Oh, Hye Min
|e verfasserin
|4 aut
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|a Bae, Jung Jun
|e verfasserin
|4 aut
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1 |
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|a Song, Young Jae
|e verfasserin
|4 aut
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|a Park, Chong-Yun
|e verfasserin
|4 aut
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|a Lee, Young Hee
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 42 vom: 06. Nov., Seite 9378-9384
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:28
|g year:2016
|g number:42
|g day:06
|g month:11
|g pages:9378-9384
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|u http://dx.doi.org/10.1002/adma.201602626
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