Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain

Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 42 vom: 06. Nov., Seite 9378-9384
1. Verfasser: Shin, Bong Gyu (VerfasserIn)
Weitere Verfasser: Han, Gang Hee, Yun, Seok Joon, Oh, Hye Min, Bae, Jung Jun, Song, Young Jae, Park, Chong-Yun, Lee, Young Hee
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoS2 bandgap direct-to-indirect bandgap transition layered materials strain
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2 on a SiO2 /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201602626