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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201603571
|2 doi
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|a eng
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| 100 |
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|a Lee, Dain
|e verfasserin
|4 aut
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|a Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity
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|c 2016
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A novel multibit MoS2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS2 flakes. The MoS2 photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 107 , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 104 s
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|a Journal Article
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|a MoS2
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|a memory devices, floating gates
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|a multilevel programs
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|a nonvolatile photoelectronic memory
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|a Hwang, Euyheon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Youngbin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Choi, Yongsuk
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Jong Su
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Seungwoo
|e verfasserin
|4 aut
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|a Cho, Jeong Ho
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
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|g 28(2016), 41 vom: 26. Nov., Seite 9196-9202
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|g volume:28
|g year:2016
|g number:41
|g day:26
|g month:11
|g pages:9196-9202
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|u http://dx.doi.org/10.1002/adma.201603571
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