Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation

Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 37 vom: 08. Okt., Seite 8240-8247
1. Verfasser: Li, Xufan (VerfasserIn)
Weitere Verfasser: Lin, Ming-Wei, Basile, Leonardo, Hus, Saban M, Puretzky, Alexander A, Lee, Jaekwang, Kuo, Yen-Chien, Chang, Lo-Yueh, Wang, Kai, Idrobo, Juan C, Li, An-Ping, Chen, Chia-Hao, Rouleau, Christopher M, Geohegan, David B, Xiao, Kai
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Mo1-xWxSe2 alloys carrier type modulation isoelectronic p−n homojunctions
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe2 is converted to nondegenerate p-type monolayer Mo1-x Wx Se2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo1-x Wx Se2 appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice
Beschreibung:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201601991