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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201600160
|2 doi
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|a pubmed24n0868.xml
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|a (NLM)27213756
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|a eng
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| 100 |
1 |
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|a Li, Linze
|e verfasserin
|4 aut
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| 245 |
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|a Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls
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|c 2016
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈10(5) ) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin-film devices
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|a Journal Article
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|a charged domain walls
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|a ferroelectrics
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|a in situ transmission electron microscopy
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|a resistive switching
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|a Britson, Jason
|e verfasserin
|4 aut
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|a Jokisaari, Jacob R
|e verfasserin
|4 aut
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|a Zhang, Yi
|e verfasserin
|4 aut
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|a Adamo, Carolina
|e verfasserin
|4 aut
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|a Melville, Alexander
|e verfasserin
|4 aut
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|a Schlom, Darrell G
|e verfasserin
|4 aut
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|a Chen, Long-Qing
|e verfasserin
|4 aut
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|a Pan, Xiaoqing
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 31 vom: 01. Aug., Seite 6574-80
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|x 1521-4095
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| 773 |
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|g volume:28
|g year:2016
|g number:31
|g day:01
|g month:08
|g pages:6574-80
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|u http://dx.doi.org/10.1002/adma.201600160
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