Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 31 vom: 01. Aug., Seite 6574-80
1. Verfasser: Li, Linze (VerfasserIn)
Weitere Verfasser: Britson, Jason, Jokisaari, Jacob R, Zhang, Yi, Adamo, Carolina, Melville, Alexander, Schlom, Darrell G, Chen, Long-Qing, Pan, Xiaoqing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article charged domain walls ferroelectrics in situ transmission electron microscopy resistive switching
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈10(5) ) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin-film devices
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201600160