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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201600890
|2 doi
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|a eng
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| 100 |
1 |
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|a Holovchenko, Anastasia
|e verfasserin
|4 aut
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|a Near Room-Temperature Memory Devices Based on Hybrid Spin-CrossoverSiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
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|c 2016
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|a Text
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|a ƒaComputermedien
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The charge transport properties of SCO [Fe(Htrz)2 (trz)](BF4 ) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies
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|a Journal Article
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|a bistability
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|a graphene
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|a molecular electronics
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|a molecular spintronics
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|a nanoparticles
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|a spin-crossover
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1 |
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|a Dugay, Julien
|e verfasserin
|4 aut
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1 |
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|a Giménez-Marqués, Mónica
|e verfasserin
|4 aut
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1 |
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|a Torres-Cavanillas, Ramón
|e verfasserin
|4 aut
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|a Coronado, Eugenio
|e verfasserin
|4 aut
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|a van der Zant, Herre S J
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 33 vom: 09. Sept., Seite 7228-33
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|x 1521-4095
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|g volume:28
|g year:2016
|g number:33
|g day:09
|g month:09
|g pages:7228-33
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|u http://dx.doi.org/10.1002/adma.201600890
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