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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601151
|2 doi
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|a pubmed25n0867.xml
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|a eng
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| 100 |
1 |
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|a Fonseca, Jose J
|e verfasserin
|4 aut
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|a Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
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|c 2016
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces
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|a Journal Article
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|a band structure modification
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|a gallium telluride
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|a layered semiconductors
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|a oxygen chemisorption
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|a Tongay, Sefaattin
|e verfasserin
|4 aut
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|a Topsakal, Mehmet
|e verfasserin
|4 aut
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|a Chew, Annabel R
|e verfasserin
|4 aut
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|a Lin, Alan J
|e verfasserin
|4 aut
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|a Ko, Changhyun
|e verfasserin
|4 aut
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|a Luce, Alexander V
|e verfasserin
|4 aut
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1 |
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|a Salleo, Alberto
|e verfasserin
|4 aut
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|a Wu, Junqiao
|e verfasserin
|4 aut
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|a Dubon, Oscar D
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 30 vom: 12. Aug., Seite 6465-70
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|x 1521-4095
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|g volume:28
|g year:2016
|g number:30
|g day:12
|g month:08
|g pages:6465-70
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