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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601071
|2 doi
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|a eng
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|a Wang, Qisheng
|e verfasserin
|4 aut
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| 245 |
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|a High-Performance Phototransistor of Epitaxial PbS Nanoplate-Graphene Heterostructure with Edge Contact
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|c 2016
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|a Text
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|a ƒaComputermedien
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|a Date Completed 17.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Fast infrared response (rising time = 24 ms) and ultrahigh photoconductive gain (10(8) ) are obtained in epitaxial PbS-nanoplate-graphene heterostructures. Combining density functional theory with experiments, this study finds single-crystalline PbS nanoplates are covalently bound to the grapheme edge with strong chemical hybridization, which offers a fast carrier transmission path
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|a Journal Article
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|a PbS nanoplate-graphene heterostructures
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|a chemical hybridization
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|a edge contacts
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|a phototransistors
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|a Wen, Yao
|e verfasserin
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|a He, Peng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yin, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhenxing
|e verfasserin
|4 aut
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|a Wang, Feng
|e verfasserin
|4 aut
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|a Xu, Kai
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|a Huang, Yun
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|a Wang, Fengmei
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|a Jiang, Chao
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| 700 |
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|a He, Jun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 30 vom: 13. Aug., Seite 6497-503
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