High-Performance Phototransistor of Epitaxial PbS Nanoplate-Graphene Heterostructure with Edge Contact

High-Performance Phototransistor of Epitaxial PbS Nanoplate-Graphene Heterostructure with Edge Contact

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 30 vom: 13. Aug., Seite 6497-503
1. Verfasser: Wang, Qisheng (VerfasserIn)
Weitere Verfasser: Wen, Yao, He, Peng, Yin, Lei, Wang, Zhenxing, Wang, Feng, Xu, Kai, Huang, Yun, Wang, Fengmei, Jiang, Chao, He, Jun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article PbS nanoplate-graphene heterostructures chemical hybridization edge contacts phototransistors
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fast infrared response (rising time = 24 ms) and ultrahigh photoconductive gain (10(8) ) are obtained in epitaxial PbS-nanoplate-graphene heterostructures. Combining density functional theory with experiments, this study finds single-crystalline PbS nanoplates are covalently bound to the grapheme edge with strong chemical hybridization, which offers a fast carrier transmission path
Beschreibung:Date Completed 17.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201601071