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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201601171
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|a eng
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|a Xu, Xiaomin
|e verfasserin
|4 aut
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|a Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors
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|c 2016
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|a Text
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|a ƒaComputermedien
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|a Date Completed 17.07.2018
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|a Date Revised 30.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport
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|a Journal Article
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|a charge transport
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|a electron mobility
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|a organic semiconductors
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|a organic thin-film transistors
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|a temperature
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|a Yao, Yifan
|e verfasserin
|4 aut
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|a Shan, Bowen
|e verfasserin
|4 aut
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|a Gu, Xiao
|e verfasserin
|4 aut
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|a Liu, Danqing
|e verfasserin
|4 aut
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|a Liu, Jinyu
|e verfasserin
|4 aut
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|a Xu, Jianbin
|e verfasserin
|4 aut
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|a Zhao, Ni
|e verfasserin
|4 aut
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|a Hu, Wenping
|e verfasserin
|4 aut
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|a Miao, Qian
|e verfasserin
|4 aut
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|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 26 vom: 05. Juli, Seite 5276-83
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:28
|g year:2016
|g number:26
|g day:05
|g month:07
|g pages:5276-83
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