Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors

Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 26 vom: 05. Juli, Seite 5276-83
1. Verfasser: Xu, Xiaomin (VerfasserIn)
Weitere Verfasser: Yao, Yifan, Shan, Bowen, Gu, Xiao, Liu, Danqing, Liu, Jinyu, Xu, Jianbin, Zhao, Ni, Hu, Wenping, Miao, Qian
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article charge transport electron mobility organic semiconductors organic thin-film transistors temperature
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport
Beschreibung:Date Completed 17.07.2018
Date Revised 30.03.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201601171