An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 24 vom: 28. Juni, Seite 4803-10
1. Verfasser:	Kim, Jong Su (VerfasserIn)
Weitere Verfasser:	Kim, Beom Joon, Choi, Young Jin, Lee, Moo Hyung, Kang, Moon Sung, Cho, Jeong Ho
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2016
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article doping graphene injection barriers organic semiconductors vertical transistors


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100	1		\|a Kim, Jong Su \|e verfasserin \|4 aut
245	1	3	\|a An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes
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500			\|a Date Completed 17.07.2018
500			\|a Date Revised 01.10.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene
650		4	\|a Journal Article
650		4	\|a doping
650		4	\|a graphene
650		4	\|a injection barriers
650		4	\|a organic semiconductors
650		4	\|a vertical transistors
700	1		\|a Kim, Beom Joon \|e verfasserin \|4 aut
700	1		\|a Choi, Young Jin \|e verfasserin \|4 aut
700	1		\|a Lee, Moo Hyung \|e verfasserin \|4 aut
700	1		\|a Kang, Moon Sung \|e verfasserin \|4 aut
700	1		\|a Cho, Jeong Ho \|e verfasserin \|4 aut
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773	1	8	\|g volume:28 \|g year:2016 \|g number:24 \|g day:28 \|g month:06 \|g pages:4803-10
856	4	0	\|u http://dx.doi.org/10.1002/adma.201505378 \|3 Volltext
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