An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 24 vom: 28. Juni, Seite 4803-10
1. Verfasser: Kim, Jong Su (VerfasserIn)
Weitere Verfasser: Kim, Beom Joon, Choi, Young Jin, Lee, Moo Hyung, Kang, Moon Sung, Cho, Jeong Ho
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article doping graphene injection barriers organic semiconductors vertical transistors
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene
Beschreibung:Date Completed 17.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201505378