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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201505865
|2 doi
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|a eng
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| 100 |
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|a Zhou, Xilin
|e verfasserin
|4 aut
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|a Phase-Change Memory Materials by Design
|b A Strain Engineering Approach
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|c 2016
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|a Text
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|a ƒaComputermedien
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|a Date Completed 22.08.2016
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Van der Waals heterostructure superlattices of Sb2 Te1 and GeTe are strain-engineered to promote switchable atomic disordering, which is confined to the GeTe layer. Careful control of the strain in the structures presents a new degree of freedom to design the properties of functional superlattice structures for data storage and photonics applications
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a interfacial phase-change memory
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|a phase-change materials
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|a strain engineering
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|a van der Waals heterostructures
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|a Kalikka, Janne
|e verfasserin
|4 aut
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1 |
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|a Ji, Xinglong
|e verfasserin
|4 aut
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| 700 |
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|a Wu, Liangcai
|e verfasserin
|4 aut
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| 700 |
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|a Song, Zhitang
|e verfasserin
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|a Simpson, Robert E
|e verfasserin
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 28(2016), 15 vom: 20. Apr., Seite 3007-16
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|g day:20
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