Phase-Change Memory Materials by Design A Strain Engineering Approach

Phase-Change Memory Materials by Design : A Strain Engineering Approach

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 15 vom: 20. Apr., Seite 3007-16
1. Verfasser: Zhou, Xilin (VerfasserIn)
Weitere Verfasser: Kalikka, Janne, Ji, Xinglong, Wu, Liangcai, Song, Zhitang, Simpson, Robert E
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't interfacial phase-change memory phase-change materials strain engineering van der Waals heterostructures
Beschreibung
Zusammenfassung:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Van der Waals heterostructure superlattices of Sb2 Te1 and GeTe are strain-engineered to promote switchable atomic disordering, which is confined to the GeTe layer. Careful control of the strain in the structures presents a new degree of freedom to design the properties of functional superlattice structures for data storage and photonics applications
Beschreibung:Date Completed 22.08.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201505865