Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading

Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 11 vom: 16. März, Seite 2183-8
Auteur principal: Bathon, Thomas (Auteur)
Autres auteurs: Achilli, Simona, Sessi, Paolo, Golyashov, Vladimir Andreevich, Kokh, Konstantin Aleksandrovich, Tereshchenko, Oleg Evgenievich, Bode, Matthias
Format: Article en ligne
Langue:English
Publié: 2016
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article density functional theory p-n junctions scanning tunneling microscopy topological insulators transport
Description
Résumé:© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A Bi2Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the existence of two distinct regions, p- and n-doped, respectively; color-coded tunneling spectra are taken over 60 nm at the transition region
Description:Date Completed 12.07.2016
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201504771