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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201504771
|2 doi
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|a eng
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|a Bathon, Thomas
|e verfasserin
|4 aut
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|a Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading
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|c 2016
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|a Text
|b txt
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|a ƒaComputermedien
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|a Date Completed 12.07.2016
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A Bi2Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the existence of two distinct regions, p- and n-doped, respectively; color-coded tunneling spectra are taken over 60 nm at the transition region
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|a Journal Article
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|a density functional theory
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|a p-n junctions
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|a scanning tunneling microscopy
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|a topological insulators
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|a transport
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1 |
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|a Achilli, Simona
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sessi, Paolo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Golyashov, Vladimir Andreevich
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kokh, Konstantin Aleksandrovich
|e verfasserin
|4 aut
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1 |
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|a Tereshchenko, Oleg Evgenievich
|e verfasserin
|4 aut
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|a Bode, Matthias
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 11 vom: 16. März, Seite 2183-8
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:28
|g year:2016
|g number:11
|g day:16
|g month:03
|g pages:2183-8
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|u http://dx.doi.org/10.1002/adma.201504771
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