Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 5 vom: 03. Feb., Seite 864-70
1. Verfasser: Park, Hyung-Youl (VerfasserIn)
Weitere Verfasser: Jung, Woo-Shik, Kang, Dong-Ho, Jeon, Jaeho, Yoo, Gwangwe, Park, Yongkook, Lee, Jinhee, Jang, Yun Hee, Lee, Jaeho, Park, Seongjun, Yu, Hyun-Yong, Shin, Byungha, Lee, Sungjoo, Park, Jin-Hong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article contact resistance doping edge contact graphene optoelectronic devices
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The effects of graphene n-doping on a metal-graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene-perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W(-1) in photoresponsivity and 3.3 × 10(4) → 5.4 × 10(4) Jones in detectivity)
Beschreibung:Date Completed 01.06.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201503715