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231224s2016 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201503694
|2 doi
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|a pubmed24n0849.xml
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|a eng
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|a Kelly, Leah L
|e verfasserin
|4 aut
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|a Hybridization-Induced Carrier Localization at the C60 /ZnO Interface
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|c 2016
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 02.06.2017
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a charge transfer
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|a hybrid organic/inorganic interfaces
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|a hybridization
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|a resonant photoemission spectroscopy
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|a ultrafast carrier dynamics
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|a Racke, David A
|e verfasserin
|4 aut
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|a Kim, Hyungchul
|e verfasserin
|4 aut
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|a Ndione, Paul
|e verfasserin
|4 aut
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|a Sigdel, Ajaya K
|e verfasserin
|4 aut
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|a Berry, Joseph J
|e verfasserin
|4 aut
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|a Graham, Samuel
|e verfasserin
|4 aut
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|a Nordlund, Dennis
|e verfasserin
|4 aut
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|a Monti, Oliver L A
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 28(2016), 20 vom: 27. Mai, Seite 3960-5
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:28
|g year:2016
|g number:20
|g day:27
|g month:05
|g pages:3960-5
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|u http://dx.doi.org/10.1002/adma.201503694
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