Hybridization-Induced Carrier Localization at the C60 /ZnO Interface

Hybridization-Induced Carrier Localization at the C60 /ZnO Interface

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 20 vom: 27. Mai, Seite 3960-5
1. Verfasser: Kelly, Leah L (VerfasserIn)
Weitere Verfasser: Racke, David A, Kim, Hyungchul, Ndione, Paul, Sigdel, Ajaya K, Berry, Joseph J, Graham, Samuel, Nordlund, Dennis, Monti, Oliver L A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. charge transfer hybrid organic/inorganic interfaces hybridization resonant photoemission spectroscopy ultrafast carrier dynamics
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices
Beschreibung:Date Completed 02.06.2017
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201503694