Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7809-15
1. Verfasser:	Ho, Po-Hsun (VerfasserIn)
Weitere Verfasser:	Chen, Chun-Hsiang, Shih, Fu-Yu, Chang, Yih-Ren, Li, Shao-Sian, Wang, Wei-Hua, Shih, Min-Chuan, Chen, Wei-Ting, Chiu, Ya-Ping, Li, Min-Ken, Shih, Yi-Siang, Chen, Chun-Wei
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2015
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article band gap opening charge transfer graphene heterostructures ultrastrong photoinduced doping


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100	1		\|a Ho, Po-Hsun \|e verfasserin \|4 aut
245	1	0	\|a Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer
264		1	\|c 2015
336			\|a Text \|b txt \|2 rdacontent
337			\|a ƒaComputermedien \|b c \|2 rdamedia
338			\|a ƒa Online-Ressource \|b cr \|2 rdacarrier
500			\|a Date Completed 10.05.2016
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated
650		4	\|a Journal Article
650		4	\|a band gap opening
650		4	\|a charge transfer
650		4	\|a graphene heterostructures
650		4	\|a ultrastrong photoinduced doping
700	1		\|a Chen, Chun-Hsiang \|e verfasserin \|4 aut
700	1		\|a Shih, Fu-Yu \|e verfasserin \|4 aut
700	1		\|a Chang, Yih-Ren \|e verfasserin \|4 aut
700	1		\|a Li, Shao-Sian \|e verfasserin \|4 aut
700	1		\|a Wang, Wei-Hua \|e verfasserin \|4 aut
700	1		\|a Shih, Min-Chuan \|e verfasserin \|4 aut
700	1		\|a Chen, Wei-Ting \|e verfasserin \|4 aut
700	1		\|a Chiu, Ya-Ping \|e verfasserin \|4 aut
700	1		\|a Li, Min-Ken \|e verfasserin \|4 aut
700	1		\|a Shih, Yi-Siang \|e verfasserin \|4 aut
700	1		\|a Chen, Chun-Wei \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Advanced materials (Deerfield Beach, Fla.) \|d 1998 \|g 27(2015), 47 vom: 16. Dez., Seite 7809-15 \|w (DE-627)NLM098206397 \|x 1521-4095 \|7 nnns
773	1	8	\|g volume:27 \|g year:2015 \|g number:47 \|g day:16 \|g month:12 \|g pages:7809-15
856	4	0	\|u http://dx.doi.org/10.1002/adma.201503592 \|3 Volltext
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