Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 47 vom: 16. Dez., Seite 7809-15
1. Verfasser: Ho, Po-Hsun (VerfasserIn)
Weitere Verfasser: Chen, Chun-Hsiang, Shih, Fu-Yu, Chang, Yih-Ren, Li, Shao-Sian, Wang, Wei-Hua, Shih, Min-Chuan, Chen, Wei-Ting, Chiu, Ya-Ping, Li, Min-Ken, Shih, Yi-Siang, Chen, Chun-Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article band gap opening charge transfer graphene heterostructures ultrastrong photoinduced doping
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated
Beschreibung:Date Completed 10.05.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201503592