Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 45 vom: 02. Dez., Seite 7412-9
1. Verfasser:	Zhang, Yuan (VerfasserIn)
Weitere Verfasser:	Zheng, Yonghao, Zhou, Huiqiong, Miao, Mao-Sheng, Wudl, Fred, Nguyen, Thuc-Quyen
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2015
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article diradicaloid electrical conductivity self-doping thermal activation


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500			\|a Date Completed 23.03.2016
500			\|a Date Revised 01.10.2020
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500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I(off)) in the transistors
650		4	\|a Journal Article
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650		4	\|a self-doping
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700	1		\|a Zheng, Yonghao \|e verfasserin \|4 aut
700	1		\|a Zhou, Huiqiong \|e verfasserin \|4 aut
700	1		\|a Miao, Mao-Sheng \|e verfasserin \|4 aut
700	1		\|a Wudl, Fred \|e verfasserin \|4 aut
700	1		\|a Nguyen, Thuc-Quyen \|e verfasserin \|4 aut
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