Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 45 vom: 02. Dez., Seite 7412-9
1. Verfasser: Zhang, Yuan (VerfasserIn)
Weitere Verfasser: Zheng, Yonghao, Zhou, Huiqiong, Miao, Mao-Sheng, Wudl, Fred, Nguyen, Thuc-Quyen
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article diradicaloid electrical conductivity self-doping thermal activation
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I(off)) in the transistors
Beschreibung:Date Completed 23.03.2016
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201502404