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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201502569
|2 doi
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|a pubmed24n0845.xml
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|a (DE-627)NLM253580765
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|a (NLM)26456380
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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1 |
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|a Leppäniemi, Jaakko
|e verfasserin
|4 aut
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|a Flexography-Printed In2 O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 20.09.2016
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2015 VTT Technical Research Centre of Finland.
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|a Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a flexographic printing
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|a metal oxides
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|a post-contact-annealing
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|a printed electronics
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|a thin-film transistors
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|a Plastics
|2 NLM
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|a Indium
|2 NLM
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|a 045A6V3VFX
|2 NLM
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|a indium oxide
|2 NLM
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|a 4OO9KME22D
|2 NLM
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1 |
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|a Huttunen, Olli-Heikki
|e verfasserin
|4 aut
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1 |
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|a Majumdar, Himadri
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Alastalo, Ari
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 44 vom: 25. Nov., Seite 7168-75
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:27
|g year:2015
|g number:44
|g day:25
|g month:11
|g pages:7168-75
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|u http://dx.doi.org/10.1002/adma.201502569
|3 Volltext
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