Flexography-Printed In2 O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate

Flexography-Printed In2 O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate

© 2015 VTT Technical Research Centre of Finland.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 44 vom: 25. Nov., Seite 7168-75
1. Verfasser: Leppäniemi, Jaakko (VerfasserIn)
Weitere Verfasser: Huttunen, Olli-Heikki, Majumdar, Himadri, Alastalo, Ari
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't flexographic printing metal oxides post-contact-annealing printed electronics thin-film transistors Plastics Indium 045A6V3VFX mehr... indium oxide 4OO9KME22D
Beschreibung
Zusammenfassung:© 2015 VTT Technical Research Centre of Finland.
Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation
Beschreibung:Date Completed 20.09.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201502569