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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201502544
|2 doi
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|a eng
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|a Ho, Kuan-I
|e verfasserin
|4 aut
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|a A Self-Aligned High-Mobility Graphene Transistor
|b Decoupling the Channel with Fluorographene to Reduce Scattering
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|c 2015
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 23.06.2016
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold
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|a Journal Article
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|a field-effect transistors
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|a fluorographene
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|a graphene
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|a scattering
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|a self-aligned
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|a Boutchich, Mohamed
|e verfasserin
|4 aut
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|a Su, Ching-Yuan
|e verfasserin
|4 aut
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|a Moreddu, Rosalia
|e verfasserin
|4 aut
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|a Marianathan, Eugene Sebastian Raj
|e verfasserin
|4 aut
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|a Montes, Laurent
|e verfasserin
|4 aut
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|a Lai, Chao-Sung
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 41 vom: 04. Nov., Seite 6519-25
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|g volume:27
|g year:2015
|g number:41
|g day:04
|g month:11
|g pages:6519-25
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