A Self-Aligned High-Mobility Graphene Transistor Decoupling the Channel with Fluorographene to Reduce Scattering

A Self-Aligned High-Mobility Graphene Transistor : Decoupling the Channel with Fluorographene to Reduce Scattering

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 41 vom: 04. Nov., Seite 6519-25
1. Verfasser: Ho, Kuan-I (VerfasserIn)
Weitere Verfasser: Boutchich, Mohamed, Su, Ching-Yuan, Moreddu, Rosalia, Marianathan, Eugene Sebastian Raj, Montes, Laurent, Lai, Chao-Sung
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article field-effect transistors fluorographene graphene scattering self-aligned
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold
Beschreibung:Date Completed 23.06.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201502544