Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 39 vom: 21. Okt., Seite 6029-33
1. Verfasser:	Wang, Qi (VerfasserIn)
Weitere Verfasser:	Itoh, Yaomi, Tsuruoka, Tohru, Aono, Masakazu, Hasegawa, Tsuyoshi
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2015
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article ReRAM atomic switches low voltage redox three terminal


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100	1		\|a Wang, Qi \|e verfasserin \|4 aut
245	1	0	\|a Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch
264		1	\|c 2015
336			\|a Text \|b txt \|2 rdacontent
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500			\|a Date Completed 13.01.2016
500			\|a Date Revised 30.09.2020
500			\|a published: Print-Electronic
500			\|a Citation Status PubMed-not-MEDLINE
520			\|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure
650		4	\|a Journal Article
650		4	\|a ReRAM
650		4	\|a atomic switches
650		4	\|a low voltage
650		4	\|a redox
650		4	\|a three terminal
700	1		\|a Itoh, Yaomi \|e verfasserin \|4 aut
700	1		\|a Tsuruoka, Tohru \|e verfasserin \|4 aut
700	1		\|a Aono, Masakazu \|e verfasserin \|4 aut
700	1		\|a Hasegawa, Tsuyoshi \|e verfasserin \|4 aut
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773	1	8	\|g volume:27 \|g year:2015 \|g number:39 \|g day:21 \|g month:10 \|g pages:6029-33
856	4	0	\|u http://dx.doi.org/10.1002/adma.201502678 \|3 Volltext
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