Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch

Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 39 vom: 21. Okt., Seite 6029-33
1. Verfasser: Wang, Qi (VerfasserIn)
Weitere Verfasser: Itoh, Yaomi, Tsuruoka, Tohru, Aono, Masakazu, Hasegawa, Tsuyoshi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article ReRAM atomic switches low voltage redox three terminal
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure
Beschreibung:Date Completed 13.01.2016
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201502678