Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution...

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Veröffentlicht in:	Journal of synchrotron radiation. - 1994. - 22(2015), 4 vom: 02. Juli, Seite 1083-90
1. Verfasser:	Li, Z J (VerfasserIn)
Weitere Verfasser:	Danilewsky, A N, Helfen, L, Mikulik, P, Haenschke, D, Wittge, J, Allen, D, McNally, P, Baumbach, T
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2015
Zugriff auf das übergeordnete Werk:	Journal of synchrotron radiation
Schlagworte:	Journal Article Research Support, Non-U.S. Gov't XMDI defect nanoindentation silicon strain