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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201501167
|2 doi
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|a pubmed25n0830.xml
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|a (DE-627)NLM249009862
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|a (NLM)25973913
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Yoon, Jung Ho
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 08.09.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism
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|a Journal Article
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|a electroforming-free
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|a multilevel switching
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|a resistive switching memory
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|a self-rectifying
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|a uniformity
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1 |
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|a Kim, Kyung Min
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Seul Ji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Seok, Jun Yeong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yoon, Kyung Jean
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kwon, Dae Eun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Tae Hyung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kwon, Young Jae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shao, Xinglong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hwang, Cheol Seong
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 25 vom: 01. Juli, Seite 3811-6
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:27
|g year:2015
|g number:25
|g day:01
|g month:07
|g pages:3811-6
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|u http://dx.doi.org/10.1002/adma.201501167
|3 Volltext
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