High-resolution characterization of the forbidden Si 200 and Si 222 reflections
The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω-2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the dif...
| Veröffentlicht in: | Journal of applied crystallography. - 1998. - 48(2015), Pt 2 vom: 01. Apr., Seite 528-532 |
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| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2015
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| Zugriff auf das übergeordnete Werk: | Journal of applied crystallography |
| Schlagworte: | Journal Article Umweganregung X-ray diffraction forbidden reflections multiple diffraction silicon |