Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 16 vom: 24. Apr., Seite 2656-62
1. Verfasser: Park, Steve (VerfasserIn)
Weitere Verfasser: Pitner, Gregory, Giri, Gaurav, Koo, Ja Hoon, Park, Joonsuk, Kim, Kwanpyo, Wang, Huiliang, Sinclair, Robert, Wong, H-S Philip, Bao, Zhenan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article alignment assembly carbon nanotubes patterning transistors
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520 |a Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micro-meter is achieved with a current density of 10.08 μA μm(-1) at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes 
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650 4 |a patterning 
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700 1 |a Giri, Gaurav  |e verfasserin  |4 aut 
700 1 |a Koo, Ja Hoon  |e verfasserin  |4 aut 
700 1 |a Park, Joonsuk  |e verfasserin  |4 aut 
700 1 |a Kim, Kwanpyo  |e verfasserin  |4 aut 
700 1 |a Wang, Huiliang  |e verfasserin  |4 aut 
700 1 |a Sinclair, Robert  |e verfasserin  |4 aut 
700 1 |a Wong, H-S Philip  |e verfasserin  |4 aut 
700 1 |a Bao, Zhenan  |e verfasserin  |4 aut 
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