Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 16 vom: 24. Apr., Seite 2656-62
1. Verfasser: Park, Steve (VerfasserIn)
Weitere Verfasser: Pitner, Gregory, Giri, Gaurav, Koo, Ja Hoon, Park, Joonsuk, Kim, Kwanpyo, Wang, Huiliang, Sinclair, Robert, Wong, H-S Philip, Bao, Zhenan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article alignment assembly carbon nanotubes patterning transistors
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micro-meter is achieved with a current density of 10.08 μA μm(-1) at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes
Beschreibung:Date Completed 16.06.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201405289