An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 17 vom: 06. Mai, Seite 2797-803
1. Verfasser: Tan, Hongwei (VerfasserIn)
Weitere Verfasser: Liu, Gang, Zhu, Xiaojian, Yang, Huali, Chen, Bin, Chen, Xinxin, Shang, Jie, Lu, Wei D, Wu, Yihong, Li, Run-Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article adjustable photoconductivity arithmetic information demodulating non-volatile memory resistive switching
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520 |a A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems 
650 4 |a Journal Article 
650 4 |a adjustable photoconductivity 
650 4 |a arithmetic 
650 4 |a information demodulating 
650 4 |a non-volatile memory 
650 4 |a resistive switching 
700 1 |a Liu, Gang  |e verfasserin  |4 aut 
700 1 |a Zhu, Xiaojian  |e verfasserin  |4 aut 
700 1 |a Yang, Huali  |e verfasserin  |4 aut 
700 1 |a Chen, Bin  |e verfasserin  |4 aut 
700 1 |a Chen, Xinxin  |e verfasserin  |4 aut 
700 1 |a Shang, Jie  |e verfasserin  |4 aut 
700 1 |a Lu, Wei D  |e verfasserin  |4 aut 
700 1 |a Wu, Yihong  |e verfasserin  |4 aut 
700 1 |a Li, Run-Wei  |e verfasserin  |4 aut 
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