An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 17 vom: 06. Mai, Seite 2797-803
1. Verfasser: Tan, Hongwei (VerfasserIn)
Weitere Verfasser: Liu, Gang, Zhu, Xiaojian, Yang, Huali, Chen, Bin, Chen, Xinxin, Shang, Jie, Lu, Wei D, Wu, Yihong, Li, Run-Wei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article adjustable photoconductivity arithmetic information demodulating non-volatile memory resistive switching
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems
Beschreibung:Date Completed 16.07.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201500039