High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 12 vom: 25. März, Seite 2107-12
1. Verfasser: Nugraha, Mohamad Insan (VerfasserIn)
Weitere Verfasser: Häusermann, Roger, Bisri, Satria Zulkarnaen, Matsui, Hiroyuki, Sytnyk, Mykhailo, Heiss, Wolfgang, Takeya, Jun, Loi, Maria Antonietta
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article ambipolar transistors colloidal nanocrystals density of trap states field effect transistors
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520 |a Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals 
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650 4 |a ambipolar transistors 
650 4 |a colloidal nanocrystals 
650 4 |a density of trap states 
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700 1 |a Häusermann, Roger  |e verfasserin  |4 aut 
700 1 |a Bisri, Satria Zulkarnaen  |e verfasserin  |4 aut 
700 1 |a Matsui, Hiroyuki  |e verfasserin  |4 aut 
700 1 |a Sytnyk, Mykhailo  |e verfasserin  |4 aut 
700 1 |a Heiss, Wolfgang  |e verfasserin  |4 aut 
700 1 |a Takeya, Jun  |e verfasserin  |4 aut 
700 1 |a Loi, Maria Antonietta  |e verfasserin  |4 aut 
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