Tuning carrier mobilities and polarity of charge transport in films of CuInSe(x)S(2-x) quantum dots

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 10 vom: 11. März, Seite 1701-5
1. Verfasser: Draguta, Sergiu (VerfasserIn)
Weitere Verfasser: McDaniel, Hunter, Klimov, Victor I
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article CuInS2 CuInSe2 field-effect transistors nanocrystals quantum dots
LEADER 01000naa a22002652 4500
001 NLM245582541
003 DE-627
005 20231224141204.0
007 cr uuu---uuuuu
008 231224s2015 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201404878  |2 doi 
028 5 2 |a pubmed24n0818.xml 
035 |a (DE-627)NLM245582541 
035 |a (NLM)25613726 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Draguta, Sergiu  |e verfasserin  |4 aut 
245 1 0 |a Tuning carrier mobilities and polarity of charge transport in films of CuInSe(x)S(2-x) quantum dots 
264 1 |c 2015 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 11.05.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a CuInSe(x)S(2-x) quantum dot field-effect transistors show p-type, n-type, and ambipolar behaviors with carrier mobilities up to 0.03 cm(2) V(-1) s(-1). Although some design rules from studies of cadmium and lead containing quantum dots can be applied, remarkable differences are observed including a strong gating effect in as-synthesized nanocyrstals with long ligands 
650 4 |a Journal Article 
650 4 |a CuInS2 
650 4 |a CuInSe2 
650 4 |a field-effect transistors 
650 4 |a nanocrystals 
650 4 |a quantum dots 
700 1 |a McDaniel, Hunter  |e verfasserin  |4 aut 
700 1 |a Klimov, Victor I  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 27(2015), 10 vom: 11. März, Seite 1701-5  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:27  |g year:2015  |g number:10  |g day:11  |g month:03  |g pages:1701-5 
856 4 0 |u http://dx.doi.org/10.1002/adma.201404878  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 27  |j 2015  |e 10  |b 11  |c 03  |h 1701-5